Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A
* Low input capacitance and gate char.

* Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revoluti.

These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high.

STB11NM80

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts